sot-23-6l plastic-encapsulate transistors IMX2 dual transistor ( npn+npn ) features low c ob ,c ob = 2.0 pf (typ). marking: x2 m aximum r atings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 6 0 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current 0.1 5 a p c collector power dissipation 0.3 w r ja thermal resistance from junction to ambient 417 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test condition m in typ m ax u nit collector-base breakdown voltage v (br) cbo i c = 5 0 a, i e =0 6 0 v collector-emitter breakdown voltage v (br) c e o i c = 1 m a, i b =0 50 v emitter - base breakdown voltage v (br)eb o i e = 5 0 a, i c =0 7 v collector cut-off current i cbo v cb = 60 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 7 v, i c =0 0.1 a dc current gain h fe v ce = 6 v, i c = 1ma 180 390 collector-emitter saturation voltage v ce(sat) i c = 5 0ma , i b = 5 ma 0. 4 v transition frequency f t v ce = 12 v,i c = 2 ma ,f=100mhz 160 mhz collector output capacitance c ob v cb = 12 v, i e =0, f=1mhz 2.0 3.5 pf so t-23-6l 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a -1 , mar ,201 4 jiangsu changjiang electronics technology co., ltd sot-23-6l plastic-encapsulate transistors IMX2 dual transistor ( npn+npn ) features low c ob ,c ob = 2.0 pf (typ). marking: x2 m aximum r atings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 6 0 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current 0.1 5 a p c collector power dissipation 0.3 w r ja thermal resistance from junction to ambient 417 /w t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics ( t a =25 unless otherwise specified) p arameter symbol test condition m in typ m ax u nit collector-base breakdown voltage v (br) cbo i c = 5 0 a, i e =0 6 0 v collector-emitter breakdown voltage v (br) c e o i c = 1 m a, i b =0 50 v emitter - base breakdown voltage v (br)eb o i e = 5 0 a, i c =0 7 v collector cut-off current i cbo v cb = 60 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 7 v, i c =0 0.1 a dc current gain h fe v ce = 6 v, i c = 1ma 180 390 collector-emitter saturation voltage v ce(sat) i c = 5 0ma , i b = 5 ma 0. 4 v transition frequency f t v ce = 12 v,i c = 2 ma ,f=100mhz 160 mhz collector output capacitance c ob v cb = 12 v, i e =0, f=1mhz 2.0 3.5 pf so t-23-6l
110100 10 100 0 25 50 75 100 125 150 0 100 200 300 400 0.1 1 10 100 10 100 0.1 1 10 100 10 100 1000 0.1 1 10 1 10 048121620 0 1 2 3 4 5 6 i c f t ?? common emitter v ce =12v t a =25 collector current i c (ma) transition frequency f t (mhz) 300 0.5 p c ?? t a ambient temperature t a ( ) collector power dissipation p c (mw) t a =100 t a =25 =10 i c v cesat ?? collector-emitter saturation voltage v cesat (mv) collector curremt i c (ma) 300 150 IMX2 i c h fe ?? t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce = 6v 20 50 f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? c ob c ib reverse voltage v (v) capacitance c (pf) common emitter t a =25 20ua 18ua 16ua 14ua 12ua 10ua 8ua 6ua collector current i c (ma) collector-emitter voltage v ce (v) static characteristic i b =2ua 4ua 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
min max min max a 1.050 1.250 0.041 0.049 a1 0.000 0.100 0.000 0.004 a2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 d 2.820 3.020 0.111 0.119 e1 1.500 1.700 0.059 0.067 e 2.650 2.950 0.104 0.116 e e1 1.800 2.000 0.071 0.079 l 0.300 0.600 0.012 0.024 0 8 0 8 symbol dimensions in millimeters dimensions in inches 0.950 ( bsc ) 0.037 ( bsc ) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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